1. Proceedings
  2. I3M
  3. 2018
  4. EMSS
  5. 10.46354/i3m.2018.emss.002

Beyond SOI - The NOI nanotransistor -Simulations results and new challenges

  • a Cătălin Pârvulescu  ,
  • b Cristian Ravariu  ,

  • c     Elena Manea  , 

  • d     Florin Babarada  , 
  • e Alina Popescu  
  • a,c,eNational Institute for Research and Development in Microtechnologies - IMT Bucharest, Romania
  • b, dPolitehnica" University of Bucharest, Faculty of Electronics, Dept. of Electronic Devices Circuits and Architectures, Str. Splaiul Independentei 313, Sect.6, 060042, Bucharest, Romania
Cite as
Pârvulescu C., Ravariu C., Manea E., Babarada F., Popescu A. (2018). Beyond SOI - The NOI nanotransistor -Simulations results and new challenges. Proceedings of the 30th European Modeling & Simulation Symposium (EMSS 2018), pp. 7-11. DOI: https://doi.org/10.46354/i3m.2018.emss.002

Abstract

For the beginning, this paper reconsiders the Nothing On Insulator transistor work principle. Then, some additional new studies are approached. Two directions are envisaged: (i) to change the source and drain composition or properties; (ii) to check if the vacuum from nanocavity can be replaced by oxide. The simulations proved excellent drain subthreshold slope of 45mV/dec for n- -V-p+ NOI variant. Oxide sub-2nm allows similar tunneling conduction as in nVn NOI variant. Comparisons with experimental picked points
from literature are available.

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