1. Proceedings
  2. I3M
  3. 2019
  4. EMSS
  5. 10.46354/i3m.2019.emss.007

The simulation of the time characteristics of the photoresistive structures based on the cadmium lead sulfides

  • a Irina N. Miroshnikova  ,
  • b Boris N. Miroshnikov  ,
  • c Elena V. Zenova  ,
  • d Mikhail Y. Presnjakov  ,
  • e Alexander A. Makarov  
  • a,b,c,e National Research University “Moscow Power Engineering Institute”, Moscow, Russia
  • a,b,c Institute of Nanotechnology of Microelectronics of the Russian Academy of Science, Moscow, Russia
  • d National Research Center “Kurchatov Institute”, Moscow, Russia
  • e International Laboratory of Statistics of Stochastic Processes and Quantitative Finance of the National Research Tomsk State University, Tomsk, Russia
Cite as
Miroshnikova I.N., Miroshnikov B.N., Zenova E.V., Presnjakov M.Y., Makarov A.A.  (2019). The simulation of the time characteristics of the photoresistive structures based on the cadmium lead sulfides. Proceedings of the 31st European Modeling & Simulation Symposium (EMSS 2019), pp. 38-41. DOI: https://doi.org/10.46354/i3m.2019.emss.007.

Abstract

The structures of the lead sulphide and lead selenide based photoresistors are examined. The simulation allowed us to explain the experimentally observed differences in the photoconductivity relaxation time between two different types of photoresistors.

References

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