1. Proceedings
  2. I3M
  3. 2019
  4. EMSS
  5. 10.46354/i3m.2019.emss.008

Property control methods of diamond-like silicon-carbon films for micro- and nanoelectronics

  • a Alexey D. Barinov  ,
  • b Anatoly I. Popov  ,
  • c Alexander A. Makarov  
  • a,b,c National Research University “Moscow Power Engineering Institute”, Moscow, Russia
  • a,b Institute of Nanotechnology of Microelectronics of the Russian Academy of Science, Moscow, Russia
  • c International Laboratory of Statistics of Stochastic Processes and Quantitative Finance of the National Research Tomsk State University, Tomsk, Russia
Cite as
Barinov A.D., Popov A.I., Makarov A.A.  (2019). Property control methods of diamond-like silicon-carbon films for micro- and nanoelectronics. Proceedings of the 31st European Modeling & Simulation Symposium (EMSS 2019), pp. 42-46. DOI: https://doi.org/10.46354/i3m.2019.emss.008.

Abstract

Possible methods for controlling the properties of amorphous diamond-like silicon-carbon films are considered: physical or structural modification, chemical modification, and physical-chemical modification. It is shown that the method of physical modification allows controlling in a wide range the properties of diamondlike silicon-carbon films (electrophysical, mechanical properties and surface morphology) without changing the chemical composition of the material. Chemical modification was carried out by introducing transition metal into diamond-like silicon-carbon films. The dependences of the phase composition, electrophysical and mechanical properties on the content and type of metal are analyzed. The method of physical-chemical modification is considered, when the introduced impurity changes not only the chemical composition, but also the structure of the material.

References

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