1. Proceedings
  2. I3M
  3. 2021
  4. EMSS
  5. 10.46354/i3m.2021.emss.040

The Physical Topological Modeling Of Single Radiation Effects In Submicron Ultrahigh-Frequency Semiconductor Diode Structures With Taking In Account The Heating Of An Electron-Hole Gas In The Charged Particle Track

  • a Elena Tarasova ,
  • b Alexander Puzanov,
  • c Veronica Bibikova,
  • d Ekaterina Volkova,
  • e Il'Ya Zabavichev,
  • f Elizaveta Obolenskaya,
  • g Alexander Potekhin,
  • h Sergey Obolensky
  • a,b,c,d,e,f,g,h  N.I. Lobachevsky state university of Nizhny Novgorod (NNSU) 603950, Nizhny Novgorod, Russia
Cite as
Tarasova E., Puzanov A., Bibikova V., Volkova E., Zabavichev I., Obolenskaya E., Potekhin A., Obolensky S. (2021). The Physical Topological Modeling Of Single Radiation Effects In Submicron Ultrahigh-Frequency Semiconductor Diode Structures With Taking In Account The Heating Of An Electron-Hole Gas In The Charged Particle Track. Proceedings of the 33rd European Modeling & Simulation Symposium (EMSS 2021), pp. 289-294. DOI: https://doi.org/10.46354/i3m.2021.emss.040

Abstract

The local nonequilibrium quasi-hydrodynamic model, based on the system of hyperbolic equations of charge carrier transport is devised. The electron temperature in the track of a heavy charged particle for various semiconductors is determined. A theoretical analysis of transient ionization processes in Mott diodes under the heavy charged particles and laser pulses simulating impact them is carried out. The effect of heating the electron-hole plasma in the track of the ion and the laser pulse on the relaxation of the photocurrent pulse is shown. Comparison of the calculated estimate of the cross section of single failures under the influence of a neutron flux with experimental data shows the adequacy of the proposed approach.

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